NaMLab

Impact of field stress pattern on the performance of HfO2-based ferroelectric tunnel junctions

https://pubs.aip.org/aip/jap/article/139/22/224101/3394040/Impact-of-field-stress-pattern-on-the-performance

Achieving a Dielectric Constant of 60 in ZrxHf1−xO2:

A Candidate for DRAM?

https://ieeexplore.ieee.org/document/11532794

Congrats to Uwe and Eilam!

https://newsroom.intel.com/corporate/intels-2025-outstanding-researcher-awards-honor-10-academic-innovators

Uwe Schroeder / NamLab gGmbH & Eilam Yalon / Technion – Israel Institute of Technology

Understanding and controlling the growth and properties of ferroelectric HZO-based device stacks

Enhancing hafnia-based ferroelectric devices requires more profound understanding of fabrication processes, defect properties, and switching phenomena at the atomic dimension. This research center established complete insight into strain mechanics, defect formation, and electrode templating for preserving ferroelectric phases and directing polarization switching in GHz operating conditions. These breakthroughs boosted reliability by allowing optimized ferroelectric device configurations for varied high-frequency applications.

Intel’s 2025 Outstanding Researcher Awards Honor 10 Academic Innovators Recognizing breakthrough university research advancing the future of technology through deep academic collaboration.

Impact of ALD Oxidant and Deposition Temperature on Electrical Characteristics of Al2O3/SiO2/SiC MOS-Capacitors

https://www.scientific.net/MSF.1192.21

Wire resistance impact and compensation methods in analog switching 1R memristive crossbar array

https://www.sciencedirect.com/science/article/pii/S0038110126000511

Diffusion of contact metals in GaN/AlGaN stacks

https://pubs.aip.org/aip/jap/article/139/18/185707/3391118/Diffusion-of-contact-metals-in-GaN-AlGaN-stacks

Overcoming the thickness scaling limit in hafnium-based ferroelectrics via interfacial strain and conductivity engineering

https://www.sciopen.com/article/10.26599/NR.2026.94908815

Variability and Retention Investigation for Ferroelectric FET with Pseudo-MFMIS Structure

https://ieeexplore.ieee.org/document/11499166

Efficient In-Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500864?utm_medium=article&utm_source=researchgate.net

A Compendium of Logic Gates Based on Reconfigurable Three-Independent-Gate Transistors Realized in FDSOI Hardware

https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500782